Formation of β-SiC nanorods with amorphous SiO2 wrapping layers

被引:22
|
作者
Meng, GW [1 ]
Zhang, LD
Qin, Y
Feng, SP
Mo, CM
Li, HJ
Zhang, SY
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Mat Sci & Engn, Anhua 230026, Peoples R China
[3] Northwestern Polytech Univ, Mat Sci & Engn Coll, Xian 710072, Shaanxi, Peoples R China
[4] Univ Sci & Technol China, Struct Res Lab, Anhua 230026, Peoples R China
关键词
D O I
10.1023/A:1006664000217
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Large quantities of β-SiC nanorods wrapped with amorphous SiO2 layers were prepared. The formation of the nanorods was based on carbothermal reduction of silica xerogels with carbon nanoparticles embedded in the network, and the formation of SiO2 layer was from the reaction of decomposed SiO and O2. An X-ray diffraction (XRD) pattern of the as-prepared composite showed several small peaks assigned to β-SiC, and a background halo pattern characteristic of an amorphous SiO phase.
引用
收藏
页码:1255 / 1257
页数:3
相关论文
共 50 条
  • [31] POLYMORPHISM IN AMORPHOUS SIO2
    GRIMSDITCH, M
    PHYSICAL REVIEW LETTERS, 1984, 52 (26) : 2379 - 2381
  • [32] Infrared distributed Bragg reflectors based on amorphous SiC/SiO2 heterostructures
    Convertino, A
    Valentini, A
    Giugno, PV
    Cingolani, R
    APPLIED PHYSICS LETTERS, 1997, 70 (21) : 2799 - 2800
  • [33] Cold sintering of SiC ceramics with the assistance of amorphous SiO2 surface layer
    Yamaguchi, Keitaro
    Lee, Gunik
    Hashimoto, Shinobu
    CERAMICS INTERNATIONAL, 2022, 48 (24) : 37362 - 37369
  • [34] Photoluminescence of SiO2 layers prepared on β-SiC films and an analysis of their elemental composition
    A. M. Danishevskiĭ
    V. M. Lebedev
    A. Yu. Rogachev
    V. B. Shuman
    A. A. Sitnikova
    R. V. Zolotareva
    Physics of the Solid State, 2007, 49 : 831 - 838
  • [35] Photoluminescence of SiO2 layers prepared on β-SiC films and an analysis of their elemental composition
    Danishevski, A. M.
    Lebedev, V. M.
    Rogachev, A. Yu.
    Shuman, V. B.
    Sitnikova, A. A.
    Zolotareva, R. V.
    PHYSICS OF THE SOLID STATE, 2007, 49 (05) : 831 - 838
  • [36] Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers
    Liu, Peizhi
    Li, Guoliang
    Duscher, Gerd
    Sharma, Yogesh K.
    Ahyi, Ayayi C.
    Isaacs-Smith, Tamara
    Williams, John R.
    Dhar, Sarit
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2014, 32 (06):
  • [37] THE PHYSICS OF SIO2 LAYERS
    VERWEY, JF
    AMERASEKERA, EA
    BISSCHOP, J
    REPORTS ON PROGRESS IN PHYSICS, 1990, 53 (10) : 1297 - 1331
  • [38] Measurements of statistical lag time of breakdown in thin amorphous layers of SiO2
    Vainer, BG
    Kupershtokh, AL
    CONFERENCE RECORD OF THE 1998 IEEE INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATION, VOLS 1 AND 2, 1998, : 169 - 172
  • [39] Parallel ultrafine SiO2 nanowires coated with amorphous SiO2
    Lv, Hang
    Song, Yuhao
    Yang, Xibao
    Sang, Dandan
    Chen, Shuanglong
    Wang, Qiushi
    Lu, Xiaodong
    JOURNAL OF NANOPARTICLE RESEARCH, 2021, 23 (02)
  • [40] Parallel ultrafine SiO2 nanowires coated with amorphous SiO2
    Hang Lv
    Yuhao Song
    Xibao Yang
    Dandan Sang
    Shuanglong Chen
    Qiushi Wang
    Xiaodong Lu
    Journal of Nanoparticle Research, 2021, 23