Ammonia-free method for preparation of CdS nanocrystalline films by chemical bath deposition technique

被引:52
作者
Nemec, P
Nemec, I
Nahálková, P
Nemcová, Y
Trojánek, F
Maly, P
机构
[1] Charles Univ, Fac Math & Phys, CR-12116 Prague 2, Czech Republic
[2] Charles Univ, Fac Sci, Prague 12840 2, Czech Republic
关键词
CdS; thin solid films; semiconductor nanocrystals; chemical bath deposition;
D O I
10.1016/S0040-6090(01)01530-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The preparation of thin films of US by chemical bath deposition is mostly based on the utilisation of ammonia as a complexing agent for cadmium ions. Here we report on a new method based on potassium nitrilotriacetate that eliminates the problems of ammonia volatility and toxicity. We prepared high quality films of closely packed nanocrystals with a thickness of up to 300 nm. The radius of the nanocrystals can be tuned from 2.6 to more than 10 nm by post-preparation heat treatment of the as-prepared films. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:9 / 12
页数:4
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