Onset of the Gunn effect in semiconductors: Bifurcation analysis and numerical simulations

被引：0

作者：

Kindelan, M ^{[1
]}

Higuera, FJ ^{[1
]}

Bonilla, LL ^{[1
]}

机构：

[1] UNIV POLITECN MADRID, ESCUELA TECN SUPER INGN AERONAUT, E-28040 MADRID, SPAIN

来源：

ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND MECHANIK | 1996年 / 76卷

关键词：

D O I：

暂无

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

In this note, the onset of the Gunn effect in the classical 1D unipolar drift-diffusion model is investigated through a Hopf bifurcation analysis of the spontaneous current oscillation. It is found that in the case that the dimensionless semiconductor length is of order unity the bifurcation is supercritical, and becomes subcritical for dimensionless lengths above a certain, critical value.

引用

页码：575 / 576

页数：2

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