Effects of annealing on the electrical properties of Fe-doped InP

被引：6
|
作者：
Zhao, YW [1 ]
Fung, S
Beling, CD
Sun, NF
Sun, TN
Chen, XD
Yang, GY
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China
[2] Hebei Semicond Res Inst, Shijiazhuang, Hebei, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 02期
关键词：
D O I：
10.1063/1.370835
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fe-doped liquid encapsulated Czochralski InP has been annealed between 500 and 900 degrees C for different durations. The electrical property of annealed InP has been studied by temperature-dependent Hall measurement. Defects in annealed Fe-doped InP have been detected by room-temperature transient photocurrent spectroscopy. Upon annealing, the change of electrical property in this material is indicative of the formation of a high concentration of defects. The formation process of these thermally induced defects is discussed. (C) 1999 American Institute of Physics. [S0021-8979(99)02914-X].
引用
收藏
页码：981 / 984
页数：4
相关论文
共 50 条
  • [31] OPTICAL AND ELECTRICAL CHARACTERIZATION OF NORMAL-TYPE AND PARA-TYPE FE-DOPED INP
    MOSEL, F
    SEIDL, A
    HOFMANN, D
    MULLER, G
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (12) : 1091 - 1094
  • [32] DIELECTRIC AND ELECTRICAL PROPERTIES OF UNDOPED AND Fe-DOPED YTTRIUM COPPER TITANATE
    Sharma, Sunita
    Singh, M. M.
    Mandal, K. D.
    PROCESSING AND PROPERTIES OF ADVANCED CERAMICS AND COMPOSITES VII, 2015, 252 : 95 - 106
  • [33] ELECTRICAL AND OPTICAL-PROPERTIES OF FE-DOPED CUINSE2
    PORRAS, GS
    WASIM, SM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 133 (02): : 509 - 514
  • [34] Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
    L. N. Alyabyeva
    E. S. Zhukova
    M. A. Belkin
    B. P. Gorshunov
    Scientific Reports, 7
  • [35] Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region
    Alyabyeva, L. N.
    Zhukova, E. S.
    Belkin, M. A.
    Gorshunov, B. P.
    SCIENTIFIC REPORTS, 2017, 7
  • [36] Ferromagnetism and electrical transport in Fe-doped NiO
    Lin, Yuan-Hua
    Wang, Jianfei
    Cai, Jingnan
    Ying, Minghao
    Zhao, Rongjuan
    Li, Ming
    Nan, Ce-Wen
    PHYSICAL REVIEW B, 2006, 73 (19)
  • [37] Photocurrent contrast in semi-insulating Fe-doped InP
    Alvarez, A
    Avella, M
    Jimenez, J
    Gonzalez, MA
    Fornari, R
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (06) : 941 - 946
  • [38] Photocurrent mapping of Fe-doped semi-insulating InP
    Jimenez, J
    Avella, M
    Alvarez, A
    Gonzalez, M
    Fornari, R
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995, 1996, 149 : 269 - 274
  • [39] Study on microscopic defects in Fe-doped InP single crystals
    Kohiro, K
    Hirano, R
    Oda, O
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (03) : 343 - 346
  • [40] A comparative study of the defects in Fe-doped or undoped semi-insulating InP after high temperature annealing
    Cherkaoui, K
    Kallel, S
    Marrakchi, G
    Karoui, A
    SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 59 - 62
12345