Effects of annealing on the electrical properties of Fe-doped InP

被引：6
|
作者：
Zhao, YW [1 ]
Fung, S
Beling, CD
Sun, NF
Sun, TN
Chen, XD
Yang, GY
机构：
[1] Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China
[2] Hebei Semicond Res Inst, Shijiazhuang, Hebei, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 02期
关键词：
D O I：
10.1063/1.370835
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fe-doped liquid encapsulated Czochralski InP has been annealed between 500 and 900 degrees C for different durations. The electrical property of annealed InP has been studied by temperature-dependent Hall measurement. Defects in annealed Fe-doped InP have been detected by room-temperature transient photocurrent spectroscopy. Upon annealing, the change of electrical property in this material is indicative of the formation of a high concentration of defects. The formation process of these thermally induced defects is discussed. (C) 1999 American Institute of Physics. [S0021-8979(99)02914-X].
引用
收藏
页码：981 / 984
页数：4
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