Nonlinear optical parameters of magnetoactive semiconductor-plasmas

被引:1
|
作者
Singh, M. [1 ]
Joseph, D. [2 ]
Duhan, S. [2 ]
机构
[1] PDM Coll Engn, Dept Phys, Bahadurgarh 124507, India
[2] GJ Univ Sci & Technol, Dept Appl Phys, Hisar 125001, Haryana, India
来源
关键词
nonlinear absorption coefficient and refractive index; piezoelectricity; magnetic field; III-V semiconductors;
D O I
10.1142/S0217979208048681
中图分类号
O59 [应用物理学];
学科分类号
摘要
The nonlinear optical parameters (absorption coefficient and refractive index) of semiconductor-plasmas subjected to a transverse magnetic field have been investigated analytically. By employing the coupled-mode scheme, an expression of third-order optical susceptibility and resultant nonlinear absorption and refractive index of the medium are obtained. The analysis has been applied to both cases, viz., centrosymmetric (beta = 0) and noncentrosymmetric (beta not equal 0) in the presence of magnetic field. The numerical estimates are made for InSb crystal at liquid nitrogen temperature duly irradiated by a 10-nanosecond pulsed 10.6 mu m CO2 laser. The influence of doping concentration and magnetic field on both the nonlinear absorption and refractive index has been explored, and the results are found to be well in agreement with theory and experiment. Analysis further establishes that absorption coefficient and refractive index can be controlled with precision in semiconductors by the proper selection of doping concentration and an external magnetic field, and hence these media may be used for fabrication of fast cubic nonlinear optical devices under off-resonant transition regime.
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页码:3877 / 3887
页数:11
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