FORMATION OF Ge NANOCRYSTALS BY ELECTRON BEAM EVAPORATION

被引：0

作者：

Basa, P. ^{[1
]}

Molnar, G. ^{[1
]}

Koos, A. A. ^{[1
]}

Dozsa, L. ^{[1
]}

Nemcsics, A. ^{[1
]}

Horvath, Zs. J. ^{[1
]}

Gorley, P. M. ^{[2
]}

Makhniy, V. P. ^{[2
]}

Bilichuk, S. V. ^{[2
]}

Frasunyak, V. M. ^{[2
]}

Horley, P. P. ^{[2
]}

机构：

[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, POB 49, H-1525 Budapest, Hungary

[2] Yuri Fedkovych Chernivtsi Natl Univ, Dept Elect & Energy Engn, Coll Phys, UA-58012 Chernovtsy, Ukraine

来源：

PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES | 2007年

基金：

匈牙利科学研究基金会;

关键词：

D O I：

10.1142/9789812770950_0096

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Ge nanocrystals were formed by electron beam evaporation on SiO2-covered Si substrates. Dependencies of the nanocrystal size, the nanocrystal surface coverage, and sheet resistance of the Ge layer were studied on the evaporation time. The growth mechanism of the nanocrystals is the Volmer-Weber type. The sheet resistance exhibited a power dependence on the nanocrystal size.

引用

页码：431 / +

页数：2

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