Impact of the Deposition and Annealing Temperature on the Silicon Surface Passivation of ALD Al2O3 Films

被引：5

作者：

Bordihn, S. ^{[1
,2
]}

Kiesow, I. ^{[1
]}

Mertens, V. ^{[1
]}

Engelhart, P. ^{[1
]}

Mueller, J. W. ^{[1
]}

Kessels, W. M. M. ^{[2
]}

机构：

[1] Q Cells SE, Sonnenallee 17-21, D-06766 Bitterfeld, Germany

[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 Eindhoven, Netherlands

来源：

PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012) | 2012年 / 27卷

关键词：

Surface passivation; ALD Al2O3; Deposition and anneal temperature; SOLAR-CELLS; INTERFACE; LAYERS;

D O I：

10.1016/j.egypro.2012.07.083

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The effect of the deposition and annealing temperature on the surface passivation of atomic layer deposited Al2O3 films was investigated on n-type Cz silicon wafers. The deposition temperature was varied between 200 and 500 degrees C and the annealing temperature between 300 and 450 degrees C, respectively. Films prepared at 200 and 300 degrees C showed an improvement of surface passivation with increasing anneal temperature. The Al2O3 films grown at 400 and 500 degrees C did not improve by annealing. By corona charging experiments it was revealed that the improvement in surface passivation with increasing anneal temperature of films grown at 300 degrees C can be attributed to a significant increase in chemical passivation with a minor increase in field-effect passivation. For Cz and FZ wafers an identical surface passivation was achieved with the chemical passivation being lower for Cz wafers due to the surface morphology and the field-effect passivation being quite similar. Consequently the field-effect passivation was found to be the more important passivation mechanism. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.

引用

页码：396 / 401

页数：6

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