High energy-storage performance in Pb0.91La0.09(Ti0.65Zr0.35)O3 relaxor ferroelectric thin films

被引：111
作者：
Hao, Xihong [1 ,2 ]
Wang, Ying [1 ]
Yang, Jichun [1 ]
An, Shengli [1 ]
Xu, Jinbao [2 ]
机构：
[1] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
[2] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 11期
基金：
中国国家自然科学基金;
关键词：
TIME TEXTURE TRANSITION; ELECTRICAL-PROPERTIES; LEAD ZIRCONATE; DENSITY;
D O I：
10.1063/1.4768461
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this work, 1-mu m-thick relaxor ferroelectric (FE) films with a typical composition of Pb0.91La0.09(Ti0.65Zr0.35)O-3 (PLZT 9/65/35) were successfully deposited on platinum-buffered silicon substrates via a sol-gel technique. The microstructure, electrical properties, and energy-storage performance of the obtained thin films were investigated in detail. X-ray diffraction (XRD) analysis and field-emission scanning electron microscopy pictures indicated that the crystallized thin films showed a random orientation with uniform and dense microstructure. Electrical measurements illustrated that the relaxor FE thin films had a considerable capacitance density of 925 nF/cm(2) at 1MHz and a higher critical breakdown field of 2177 kV/cm. As a result, a large recoverable energy-storage density of 28.7 J/cm(3) was obtained in the thin films at room temperature. Moreover, good charge-discharge endurance was also realized in the FE films, confirmed by the repeated polarizationelectric field loops. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768461]
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页数：6
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