Soft lithography fabrication of all-organic bottom-contact and top-contact field effect transistors

被引：55
作者：
Cosseddu, P
Bonfiglio, A
机构：
[1] Univ Cagliari, INFM, Dept Elect & Elect Engn, I-09123 Cagliari, Italy
[2] INFM S3, Modena, Italy
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 02期
关键词：
D O I：
10.1063/1.2166487
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
All-organic field effect transistors on flexible plastic substrates have been fabricated. A thin Mylar (R) foil acts both as substrate and gate dielectric. The contacts have been fabricated with poly(ethylene-dioxythiophene)/polystyrene sulfonate (PEDT/PSS) by means of soft lithography. The active layer (pentacene) is vacuum sublimed on the prepatterned film in case of bottom-contact devices or, in case of top-contact devices, the active layer sublimation is made in advance. On the opposite side of the foil, a thin PEDT/PSS film, acting as gate electrode, is spin coated. The comparison between top-contact and bottom-contact devices shows interesting characteristics as a marked difference in the I-D versus V-D curve that can be mainly attributed to a different quality of PEDT/PSS-semiconductor contact. The flexibility of the obtained structure and the easy scalability of the technological process open the way for economic production of high resolution organic devices.
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页码：1 / 3
页数：3
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共 23 条
[11]   Influence of thermal treatment on the conductivity and morphology of PEDOT/PSS films [J].
Huang, J ;
Miller, PF ;
de Mello, JC ;
de Mello, AJ ;
Bradley, DDC .
SYNTHETIC METALS, 2003, 139 (03) :569-572
[12]   Contact resistance in organic thin film transistors [J].
Klauk, H ;
Schmid, G ;
Radlik, W ;
Weber, W ;
Zhou, LS ;
Sheraw, CD ;
Nichols, JA ;
Jackson, TN .
SOLID-STATE ELECTRONICS, 2003, 47 (02) :297-301
[13]   High-performance contacts in plastic transistors and logic gates that use printed electrodes of DNNSA-PANI doped with single-walled carbon nanotubes [J].
Lefenfeld, M ;
Blanchet, G ;
Rogers, JA .
ADVANCED MATERIALS, 2003, 15 (14) :1188-+
[14]   Flexible, organic, ion-sensitive field-effect transistor [J].
Loi, A ;
Manunza, I ;
Bonfiglio, A .
APPLIED PHYSICS LETTERS, 2005, 86 (10) :1-3
[15]   Additive, nanoscale patterning of metal films with a stamp and a surface chemistry mediated transfer process: Applications in plastic electronics [J].
Loo, YL ;
Willett, RL ;
Baldwin, KW ;
Rogers, JA .
APPLIED PHYSICS LETTERS, 2002, 81 (03) :562-564
[16]   The future of electronics manufacturing is revealed in the fine print [J].
Nuzzo, RG .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2001, 98 (09) :4827-4829
[17]   Degradation of organic field-effect transistors made of pentacene [J].
Pannemann, C ;
Diekmann, T ;
Hilleringmann, U .
JOURNAL OF MATERIALS RESEARCH, 2004, 19 (07) :1999-2002
[18]   H2O effect on the stability of organic thin-film field-effect transistors [J].
Qiu, Y ;
Hu, YC ;
Dong, GF ;
Wang, LD ;
Xie, JF ;
Ma, YN .
APPLIED PHYSICS LETTERS, 2003, 83 (08) :1644-1646
[19]   Elastomeric transistor stamps: Reversible probing of charge transport in organic crystals [J].
Sundar, VC ;
Zaumseil, J ;
Podzorov, V ;
Menard, E ;
Willett, RL ;
Someya, T ;
Gershenson, ME ;
Rogers, JA .
SCIENCE, 2004, 303 (5664) :1644-1646
[20]   Soft lithography [J].
Xia, YN ;
Whitesides, GM .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 :153-184
123