An approach to cost-effective, robust, large-area electronics using monolithic silicon

被引：30

作者：

Huang, Kevin ^{[1
]}

Dinyari, Rostam ^{[1
]}

Lanzara, Giulia ^{[2
]}

Kim, Jong Yon ^{[1
]}

Feng, Jianmin ^{[2
]}

Vancura, Cyril

Chang, Fu-Kuo ^{[2
]}

Peumans, Peter ^{[1
,3
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Palo Alto, CA 94304 USA

[2] Stanford Univ, Dept Aeronaut & Astronaut, Stanford, CA 94305 USA

[3] Robert Bosch LLC, Res & Tech Ctr, Palo Alto, CA USA

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418906

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed an approach to build large-area electronics from monolithic silicon integrated circuits. The method used deep reactive ion etching to structure a monolithic silicon substrate into a stretchable, two-dimensional, wired network that can be expanded to cover large planar or curved surfaces to realize high-performance, large-area, monolithic silicon electronics in a cost-effective manner. This approach has applications in sensing, smart materials, electronic textile, RFID tag and microconcentrator solar cell manufacturing.

引用

页码：217 / +

页数：2

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