Defect-Driven Interfacial Electronic Structures at an Organic/Metal-Oxide Semiconductor Heterojunction

被引:43
|
作者
Winget, Paul [1 ,2 ]
Schirra, Laura K. [3 ]
Cornil, David [1 ,2 ]
Li, Hong [1 ]
Coropceanu, Veaceslav [1 ,2 ]
Ndione, Paul F. [4 ]
Sigdel, Ajaya K. [4 ]
Ginley, David S. [4 ]
Berry, Joseph J. [4 ]
Shim, Jaewon [2 ,5 ]
Kim, Hyungchui [2 ,5 ]
Kippelen, Bernard [2 ,5 ]
Bredas, Jean-Luc [1 ,2 ,6 ]
Monti, Oliver L. A. [3 ]
机构
[1] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA
[3] Univ Arizona, Dept Chem & Biochem, Tucson, AZ 85721 USA
[4] Natl Renewable Energy Lab, Golden, CO 80401 USA
[5] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[6] King Abdulaziz Univ, Dept Chem, Jeddah 21413, Saudi Arabia
关键词
TOTAL-ENERGY CALCULATIONS; ZINC-OXIDE; ZNO NANOSTRUCTURES; WORK FUNCTION; POINT-DEFECTS; METAL-OXIDE; SURFACE; 10(1)OVER-BAR0; MORPHOLOGY; SPECTRA;
D O I
10.1002/adma.201305351
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.
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页码:4711 / +
页数:7
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