Defect-Driven Interfacial Electronic Structures at an Organic/Metal-Oxide Semiconductor Heterojunction

被引:43
|
作者
Winget, Paul [1 ,2 ]
Schirra, Laura K. [3 ]
Cornil, David [1 ,2 ]
Li, Hong [1 ]
Coropceanu, Veaceslav [1 ,2 ]
Ndione, Paul F. [4 ]
Sigdel, Ajaya K. [4 ]
Ginley, David S. [4 ]
Berry, Joseph J. [4 ]
Shim, Jaewon [2 ,5 ]
Kim, Hyungchui [2 ,5 ]
Kippelen, Bernard [2 ,5 ]
Bredas, Jean-Luc [1 ,2 ,6 ]
Monti, Oliver L. A. [3 ]
机构
[1] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA
[3] Univ Arizona, Dept Chem & Biochem, Tucson, AZ 85721 USA
[4] Natl Renewable Energy Lab, Golden, CO 80401 USA
[5] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[6] King Abdulaziz Univ, Dept Chem, Jeddah 21413, Saudi Arabia
关键词
TOTAL-ENERGY CALCULATIONS; ZINC-OXIDE; ZNO NANOSTRUCTURES; WORK FUNCTION; POINT-DEFECTS; METAL-OXIDE; SURFACE; 10(1)OVER-BAR0; MORPHOLOGY; SPECTRA;
D O I
10.1002/adma.201305351
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electronic structure of the hybrid interface between ZnO and the prototypical organic semiconductor PTCDI is investigated via a combination of ultraviolet and X-ray photoelectron spectroscopy (UPS/XPS) and density functional theory (DFT) calculations. The interfacial electronic interactions lead to a large interface dipole due to substantial charge transfer from ZnO to 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI), which can be properly described only when accounting for surface defects that confer ZnO its n-type properties.
引用
收藏
页码:4711 / +
页数:7
相关论文
共 50 条
  • [1] Unified photoemission spectroscopic picture of defect-driven charge carrier physics at an organic semiconductor/metal oxide interface
    Racke, David A.
    Kelly, Leah L.
    Schulz, Philip
    Winget, Paul
    Li, Hong
    Kim, Hyungchul
    Sigdel, Ajaya
    Berry, Joseph J.
    Graham, Samuel
    Bredas, Jean-Luc
    Nordlund, Dennis
    Kahn, Antoine
    Monti, Oliver L. A.
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2014, 248
  • [2] EFFECTS OF HYDROGEN ON PALLADIUM METAL-OXIDE SEMICONDUCTOR STRUCTURES
    RUTHS, JM
    FONASH, SJ
    SULLIVAN, TE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : C358 - C358
  • [3] Defect-Driven Oxide Transformations and the Electrochemical Interphase
    Wan, Gang
    Sun, Cheng-Jun
    Freeland, John W.
    Fong, Dillon D.
    ACCOUNTS OF CHEMICAL RESEARCH, 2021, 54 (15) : 3039 - 3049
  • [4] ELECTRONIC DEFECT LEVELS IN CONTINUOUS WAVE LASER ANNEALED SILICON METAL-OXIDE SEMICONDUCTOR-DEVICES
    CERVERA, M
    GARCIA, BJ
    MARTINEZ, J
    GARRIDO, J
    PIQUERAS, J
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3079 - 3084
  • [5] Interfacial Charge Dynamics in Metal-Oxide Semiconductor Structures: The Effect of Deep Traps and Acceptor Levels in GaN
    Sharabani, Y.
    Palmieri, Andrea
    Kyrtsos, Alexandros
    Matsubara, Masahiko
    Bellotti, Enrico
    PHYSICAL REVIEW APPLIED, 2020, 13 (01):
  • [6] Electronic structures of composition graded metal-oxide systems
    Yukawa, H
    Kishimoto, M
    Morinaga, M
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1998, 62 (11) : 1044 - 1050
  • [7] SPECTROSCOPIC AND ELECTRICAL STUDIES OF GAAS METAL-OXIDE SEMICONDUCTOR STRUCTURES
    FREEOUF, JL
    SILBERMAN, JA
    WRIGHT, SL
    TIWARI, S
    BATEY, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 854 - 860
  • [8] METAL-OXIDE SEMICONDUCTOR ELECTRODES
    TAMURA, H
    DENKI KAGAKU, 1981, 49 (07): : 410 - 414
  • [9] METAL-OXIDE SEMICONDUCTOR DEVICES
    WILDER, EM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (05): : 909 - &
  • [10] METAL-OXIDE SEMICONDUCTOR DEVICES
    WILDER, EM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (01): : 146 - &