Two-dimensional analytical modelling of short-channel MOS transistors

被引:0
|
作者
ElGhitani, H
Sadik, S
Shousha, AH
机构
[1] Electrical Engineering Department, United Arab Emirates University, Al Ain
关键词
D O I
10.1080/002072196136418
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An analytical model for the current-voltage characteristics of short-channel MOS transistors is presented. The model is a two-dimensional model based on the solution of a Poisson equation in the depletion region under the gate. The degradation of inversion carriers' mobility due to the strong lateral electric field is taken into account. An attractive feature of this model is that it provides an analytical expression for the I-V characteristics of the MOSFET as a function of material and device parameters. In addition, it is valid for both short- and long-channel transistors. The numerical I-V characteristics obtained using the proposed model are in close agreement with experimental data. It is concluded that the proposed model is an accurate and efficient model. Consequently, it can be used in circuit simulation programs.
引用
收藏
页码:517 / 524
页数:8
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