Interface structure of epitaxial (111) VN films on (111) MgO substrates

被引：16
|
作者：
Lazar, Petr [2 ]
Rashkova, Boriana [1 ,3 ]
Redinger, Josef [2 ]
Podloucky, Raimund [4 ]
Mitterer, Christian [5 ]
Scheu, Christina [5 ]
Dehm, Gerhard [1 ,3 ]
机构：
[1] Austrian Acad Sci, Erich Schmid Inst Mat Sci, A-8700 Leoben, Austria
[2] Vienna Univ Technol, Inst Gen Phys, A-1000 Vienna, Austria
[3] Univ Leoben, Dept Mat Phys, A-8700 Leoben, Austria
[4] Univ Vienna, Dept Phys Chem, A-1000 Vienna, Austria
[5] Univ Leoben, Dept Phys Met & Mat Testing, A-8700 Leoben, Austria
来源：
THIN SOLID FILMS | 2008年 / 517卷 / 03期
基金：
奥地利科学基金会;
关键词：
VN/MgO interface; Misfit dislocations; Adhesion energy;
D O I：
10.1016/j.tsf.2008.06.006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Vanadium nitride VN was grown epitaxially on (111) MgO by reactive magnetron sputtering. The substrate preparation and deposition conditions cause an interface roughness of 2-3 nm. The lattice mismatch of cube-on-cube orientation relationship between (111) VN and (111) MgO is relaxed by misfit dislocations. Ab-initio simulations were employed to Calculate the lowest energy configuration of the coherent parts of the interface. This is accomplished by an O termination of the MgO and V termination of VN at the interface. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1177 / 1181
页数：5
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