Quantitative evaluation method for electroluminescence images of a-Si: H thin-film solar modules

被引：12

作者：

Tran, T. M. H. ^{[1
]}

Pieters, B. E. ^{[1
]}

Schneemann, M. ^{[1
]}

Mueller, T. C. M. ^{[1
]}

Gerber, A. ^{[1
]}

Kirchartz, T. ^{[2
,3
]}

Rau, U. ^{[1
]}

机构：

[1] Forschungszentrum Julich, Photovolta IEK5, D-52425 Julich, Germany

[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England

[3] Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 09期

关键词：

thin-film solar cells; electroluminescence; a-Si:H solar cells; ideality factor; junction voltage; CELLS; CU(IN; GA)SE-2; SHUNTS;

D O I：

10.1002/pssr.201308039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work presents a method for extracting the absolute local junction voltage of a-Si:H thin-film solar cells and modules from electroluminescence (EL) images. It is shown that the electroluminescent emission of a-Si:H devices follows a diode law with a radiative ideality factor n(r) larger than one. We introduce an evaluation method that allows us to determine the absolute local junction voltage in cases of n(r) > 1, while existing approaches rely on the assumption of n(r) = 1. Furthermore, we find that the experimentally determined values of n(r) vary from sample to sample. It is also explained why the derived radiative ideality factor is influenced by the spectral sensitivity of the camera system used in the experiment. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：627 / 630

页数：4

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