Refining Behavior of Aluminum Alloyed Metallurgical-Grade Silicon During Fractional Melting Process

被引：4
|
作者：
Lee, Changbum [1 ]
Chung, Juho [1 ]
Lee, Jaewoo [1 ]
Yoon, Wooyoung [1 ]
机构：
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 10期
关键词：
Refining; Fractional Melting; Silicon; Aluminum; Impurity; SI-AL MELT; IMPURITY GETTER; SOLIDIFICATION; PURIFICATION; REMOVAL; PHOSPHORUS; FE; GROWTH; IRON;
D O I：
10.1166/jnn.2013.8270
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In order to overcome the limitations in refining metallurgical-grade silicon (MG-Si) by fractional melting (FM), an alloying process was adopted. Aluminum was selected as the alloying element as it has no intermetallic compound and the lowest eutectic point (577 degrees C). A 2% Al-Si sample was made and purified by FM. The removal of 99.8% of impurities was obtained by FM via aluminum alloying with MG-Si. The 2% Al-Si sample was also effective in boron removal (99% refining ratio).
引用
收藏
页码：7161 / 7164
页数：4
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