Structure of silicene on a Ag(111) surface studied by reflection high-energy positron diffraction

被引：64

作者：

Fukaya, Y. ^{[1
]}

Mochizuki, I. ^{[2
]}

Maekawa, M. ^{[1
]}

Wada, K. ^{[2
]}

Hyodo, T. ^{[2
]}

Matsuda, I. ^{[3
]}

Kawasuso, A. ^{[1
]}

机构：

[1] Japan Atom Energy Agcy, Adv Sci Res Ctr, Takasaki, Gunma 3701292, Japan

[2] High Energy Accelerator Res Org KEK, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan

[3] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 20期

关键词：

BEAM; TRANSMISSION; INTENSITY;

D O I：

10.1103/PhysRevB.88.205413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of silicene fabricated on a Ag(111) surface was determined using reflection high-energy positron diffraction with a linac-based brightness-enhanced intense positron beam. From the rocking curve analysis, the silicene was verified to have a buckled structure with a spacing of 0.83 angstrom between the top and the bottom Si layers. The distance between the bottom Si layer in the silicene and the first Ag layer was determined to be 2.14 angstrom. These results agree with the theoretically predicted values from a previous study [Phys. Rev. Lett. 108, 155501 (2012)] within an error of +/- 0.05 angstrom.

引用

页数：4

共 21 条

[11]

Ichimiya A., 1992, Solid State Phenom, V28-29, P143

[12] Growth of silicene layers on Ag(111): unexpected effect of the substrate temperature [J].

Jamgotchian, H. ;

Colignon, Y. ;

Hamzaoui, N. ;

Ealet, B. ;

Hoarau, J. Y. ;

Aufray, B. ;

Biberian, J. P. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (17)

[13] Reflection high energy positron diffraction from a Si(111) surface [J].

Kawasuso, A ;

Okada, S .

PHYSICAL REVIEW LETTERS, 1998, 81 (13) :2695-2698

[14] Substrate-Induced Symmetry Breaking in Silicene [J].

Lin, Chun-Liang ;

Arafune, Ryuichi ;

Kawahara, Kazuaki ;

Kanno, Mao ;

Tsukahara, Noriyuki ;

Minamitani, Emi ;

Kim, Yousoo ;

Kawai, Maki ;

Takagi, Noriaki .

PHYSICAL REVIEW LETTERS, 2013, 110 (07)

[15] Structure of Silicene Grown on Ag(111) [J].

Lin, Chun-Liang ;

Arafune, Ryuichi ;

Kawahara, Kazuaki ;

Tsukahara, Noriyuki ;

Minamitani, Emi ;

Kim, Yousoo ;

Takagi, Noriaki ;

Kawai, Maki .

APPLIED PHYSICS EXPRESS, 2012, 5 (04)

[16] In-plane dispersion of the quantum-well states of the epitaxial silver films on silicon [J].

Matsuda, I ;

Ohta, T ;

Yeom, HW .

PHYSICAL REVIEW B, 2002, 65 (08) :853271-853277

[17] TRANSMISSION OF 1-6-KEV POSITRONS THROUGH THIN METAL-FILMS [J].

MILLS, AP ;

WILSON, RJ .

PHYSICAL REVIEW A, 1982, 26 (01) :490-500

[18] COMPLEX LATTICE POTENTIALS IN ELECTRON DIFFRACTION CALCULATED FOR A NUMBER OF CRYSTALS [J].

RADI, G .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1970, A 26 :41-&

[19] THEORETICAL POSSIBILITY OF STAGE CORRUGATION IN SI AND GE ANALOGS OF GRAPHITE [J].

TAKEDA, K ;

SHIRAISHI, K .

PHYSICAL REVIEW B, 1994, 50 (20) :14916-14922

[20] Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon [J].

Vogt, Patrick ;

De Padova, Paola ;

Quaresima, Claudio ;

Avila, Jose ;

Frantzeskakis, Emmanouil ;

Asensio, Maria Carmen ;

Resta, Andrea ;

Ealet, Benedicte ;

Le Lay, Guy .

PHYSICAL REVIEW LETTERS, 2012, 108 (15)

← 1 2 3 →