Effects of carrier gas on the stress of a-plane GaN films grown on r-plane sapphire substrates by metalorganic chemical vapor deposition

被引：18

作者：

Li, DS ^{[1
]}

Chen, H ^{[1
]}

Yu, HB ^{[1
]}

Han, YJ ^{[1
]}

Zheng, XH ^{[1
]}

Huang, Q ^{[1
]}

Zhou, JM ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, State Key lab Surface Phys, Grp 605, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 263卷 / 1-4期

关键词：

metalorganic chemical vapor deposition; nitrides;

D O I：

10.1016/j.jcrysgro.2003.11.060

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The anisotropic stresses of a-plane GaN films were in detail investigated. Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by MOCVD. High resolution X-ray diffraction and polarized Raman scattering measures were performed to characterize the epitaxial films. The full width at half maximum of rocking wave is just 0.25degrees. Raman spectra provide us evidence that anisotropic stresses exist within the epitaxial GaN films. The effects of carrier gas on the stress states of the films were studied by Raman spectra. The stress was larger in film grown with hydrogen carrier gas than with nitrogen carrier gas. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：76 / 79

页数：4

共 15 条

[1]

Amhata T, 1995, J PHYS CONDENS MATT, V7, pL129

[2] FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].

ARGUELLO, CA ;

ROUSSEAU, DL ;

PORTO, SPS .

PHYSICAL REVIEW, 1969, 181 (03) :1351-&

[3] Lateral epitaxial overgrowth of fully coalesced a-plane GaN on r-plane sapphire [J].

Chen, CQ ;

Yang, JW ;

Wang, HM ;

Zhang, JP ;

Adivarahan, V ;

Gaevski, M ;

Kuokstis, E ;

Gong, Z ;

Su, M ;

Khan, MA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (6B) :L640-L642

[4] Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire [J].

Craven, MD ;

Lim, SH ;

Wu, F ;

Speck, JS ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :469-471

[5] Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC [J].

Davydov, VY ;

Averkiev, NS ;

Goncharuk, IN ;

Nelson, DK ;

Nikitina, IP ;

Polkovnikov, AS ;

Smirnov, AN ;

Jacobsen, MA ;

Semchinova, OK .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5097-5102

[6]

KHAN MA, 1993, APPL PHYS LETT, V63, P1214, DOI 10.1063/1.109775

[7] Influence of N2 carrier gas on surface stoichiometry in GaN MOVPE studied by surface photoabsorption [J].

Kobayashi, Y ;

Kobayashi, N .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :301-304

[8] High internal electric field in a graded-width InGaN/GaN quantum well:: Accurate determination by time-resolved photoluminescence spectroscopy [J].

Lefebvre, P ;

Morel, A ;

Gallart, M ;

Taliercio, T ;

Allègre, J ;

Gil, B ;

Mathieu, H ;

Damilano, B ;

Grandjean, N ;

Massies, J .

APPLIED PHYSICS LETTERS, 2001, 78 (09) :1252-1254

[9] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

MARUSKA, HP ;

TIETJEN, JJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&

[10] HIGHLY P-TYPED MG-DOPED GAN FILMS GROWN WITH GAN BUFFER LAYERS [J].

NAKAMURA, S ;

SENOH, M ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1708-L1711

← 1 2 →