Low driving voltage organic light emitting diode using phenanthrene oligomers as electron transport layer

被引:11
作者
Hung, Hsiao-Wen [1 ,2 ]
Yokoyama, Norimasa [3 ]
Yahiro, Masayuki [1 ,2 ]
Adachi, Chihaya [1 ,2 ]
机构
[1] Kyushu Univ, Ctr Future Chem, Nishi Ku, Fukuoka 8190395, Japan
[2] Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol Program, Shibuya Ku, Tokyo 1500011, Japan
[3] Hodogaya Chem Co, Ctr Res & Dev, Tsukuba, Ibaraki 3050841, Japan
关键词
Low driving voltage; Phenanthrene; Electron transport layer;
D O I
10.1016/j.tsf.2008.05.047
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We demonstrate that an electron transport material, 2-(phenanthren-10-yl)-7-(phenanthren-9-yl)phenanthrene (Phen-A), significantly lowers the driving voltage in organic light emitting diodes. In a device structure of indium tin oxides (110 nm)/N,N'-di(alpha-naphtyl)-N,N'-diphenyl-benzidine (50 nm)/tris-(8-hydroxy quinoline)aluminum (20 nm)/Phen-A (30 nm)/MgAg(100 nm)/Ag (10 nm), a very low driving voltage of 5.8 V was obtained at a current density of 100 mA/cm(2). We clarified that Phen-A has a preferred the lowest unoccupied molecular orbital level and a characteristic polycrystalline texture, which are ascribed to the reason for the improved electron injection efficiency at the Phen-A/cathode interface. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:8717 / 8720
页数:4
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