Low driving voltage organic light emitting diode using phenanthrene oligomers as electron transport layer

被引：11

作者：

Hung, Hsiao-Wen ^{[1
,2
]}

Yokoyama, Norimasa ^{[3
]}

Yahiro, Masayuki ^{[1
,2
]}

Adachi, Chihaya ^{[1
,2
]}

机构：

[1] Kyushu Univ, Ctr Future Chem, Nishi Ku, Fukuoka 8190395, Japan

[2] Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol Program, Shibuya Ku, Tokyo 1500011, Japan

[3] Hodogaya Chem Co, Ctr Res & Dev, Tsukuba, Ibaraki 3050841, Japan

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 23期

关键词：

Low driving voltage; Phenanthrene; Electron transport layer;

D O I：

10.1016/j.tsf.2008.05.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate that an electron transport material, 2-(phenanthren-10-yl)-7-(phenanthren-9-yl)phenanthrene (Phen-A), significantly lowers the driving voltage in organic light emitting diodes. In a device structure of indium tin oxides (110 nm)/N,N'-di(alpha-naphtyl)-N,N'-diphenyl-benzidine (50 nm)/tris-(8-hydroxy quinoline)aluminum (20 nm)/Phen-A (30 nm)/MgAg(100 nm)/Ag (10 nm), a very low driving voltage of 5.8 V was obtained at a current density of 100 mA/cm(2). We clarified that Phen-A has a preferred the lowest unoccupied molecular orbital level and a characteristic polycrystalline texture, which are ascribed to the reason for the improved electron injection efficiency at the Phen-A/cathode interface. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：8717 / 8720

页数：4

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