Magnetoelectric thin film composites with interdigital electrodes

被引：53

作者：

Piorra, A. ^{[1
]}

Jahns, R. ^{[2
]}

Teliban, I. ^{[2
]}

Gugat, J. L. ^{[3
]}

Gerken, M. ^{[3
]}

Knoechel, R. ^{[2
]}

Quandt, E. ^{[1
]}

机构：

[1] Univ Kiel, Chair Inorgan Funct Mat, Fac Engn, Inst Mat Sci, D-24143 Kiel, Germany

[2] Univ Kiel, Microwave Lab, Fac Engn, Inst Elect & Informat Engn, D-24143 Kiel, Germany

[3] Univ Kiel, Chair Integrated Syst & Photon, Fac Engn, Inst Elect & Informat Engn, D-24143 Kiel, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 03期

关键词：

III-V semiconductors;

D O I：

10.1063/1.4812706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O-3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz(1/2) at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor. (C) 2013 AIP Publishing LLC.

引用

页数：5

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