Influence of high-k dielectric material on the electrical performance of a-IGZO Thin Film Transistor

被引：3

作者：

Jain, Neeraj ^{[1
,2
]}

Sharma, Shashi Kant ^{[3
]}

Kumawat, Renu ^{[4
]}

Jain, Abhinandan ^{[2
]}

Lakhawat, Sunil ^{[4
]}

机构：

[1] Manipal Univ Jaipur, Dept Elect & Commun Engn, Jaipur 303007, Rajasthan, India

[2] Swami Keshvanand Inst Technol Management & Gramot, Dept Elect & Commun Engn, Jaipur 302017, Rajasthan, India

[3] Indian Inst Informat Technol, Dept Elect & Commun Engn, Ranchi 834010, Jharkhand, India

[4] Manipal Univ Jaipur, Dept Comp & Commun Engn, Jaipur 303007, Rajasthan, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2022年 / 66卷

关键词：

Silvaco; a-IGZO; High-k; Equivalent Oxide Thickness (EOT); GATE DIELECTRICS;

D O I：

10.1016/j.matpr.2022.07.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Here, the electrical performance of an amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin Film Transistor (TFT) is examined using the Silvaco Atlas tool. The effects of several factors such as drain current (I-d), Sub threshold Swing (SS), I-on/I-off, threshold voltage (V-th), on voltage (V-on) are closely examined. When SiO2 was replaced by high-k HfO2, TFT shows low SS of 0.17 V/decade, high I-on/I-off ratio of similar to 10(18) and V-on of 0.13 V. Effect of channel length is also analysed for high-k Al2O3 dielectric. This analysis might be useful for researchers to realize future TFT related applications. (C) 2022 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the 3rd International Conference on "Advancement in Nanoelectronics and Communication Technologies''.

引用

页码：3553 / 3558

页数：6

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