Influence of high-k dielectric material on the electrical performance of a-IGZO Thin Film Transistor

被引：3
|
作者：
Jain, Neeraj [1 ,2 ]
Sharma, Shashi Kant [3 ]
Kumawat, Renu [4 ]
Jain, Abhinandan [2 ]
Lakhawat, Sunil [4 ]
机构：
[1] Manipal Univ Jaipur, Dept Elect & Commun Engn, Jaipur 303007, Rajasthan, India
[2] Swami Keshvanand Inst Technol Management & Gramot, Dept Elect & Commun Engn, Jaipur 302017, Rajasthan, India
[3] Indian Inst Informat Technol, Dept Elect & Commun Engn, Ranchi 834010, Jharkhand, India
[4] Manipal Univ Jaipur, Dept Comp & Commun Engn, Jaipur 303007, Rajasthan, India
来源：
MATERIALS TODAY-PROCEEDINGS | 2022年 / 66卷
关键词：
Silvaco; a-IGZO; High-k; Equivalent Oxide Thickness (EOT); GATE DIELECTRICS;
D O I：
10.1016/j.matpr.2022.07.013
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Here, the electrical performance of an amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin Film Transistor (TFT) is examined using the Silvaco Atlas tool. The effects of several factors such as drain current (I-d), Sub threshold Swing (SS), I-on/I-off, threshold voltage (V-th), on voltage (V-on) are closely examined. When SiO2 was replaced by high-k HfO2, TFT shows low SS of 0.17 V/decade, high I-on/I-off ratio of similar to 10(18) and V-on of 0.13 V. Effect of channel length is also analysed for high-k Al2O3 dielectric. This analysis might be useful for researchers to realize future TFT related applications. (C) 2022 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the 3rd International Conference on "Advancement in Nanoelectronics and Communication Technologies''.
引用
收藏
页码：3553 / 3558
页数：6
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