Influence of high-k dielectric material on the electrical performance of a-IGZO Thin Film Transistor

Here, the electrical performance of an amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin Film Transistor (TFT) is examined using the Silvaco Atlas tool. The effects of several factors such as drain current (I-d), Sub threshold Swing (SS), I-on/I-off, threshold voltage (V-th), on voltage (V-on) are closely examined. When SiO2 was replaced by high-k HfO2, TFT shows low SS of 0.17 V/decade, high I-on/I-off ratio of similar to 10(18) and V-on of 0.13 V. Effect of channel length is also analysed for high-k Al2O3 dielectric. This analysis might be useful for researchers to realize future TFT related applications. (C) 2022 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the 3rd International Conference on "Advancement in Nanoelectronics and Communication Technologies''.