Deposition of silicon carbide films by plasma enhanced chemical vapour deposition

被引：4
|
作者：
Ramirez, J
Suhr, H
Szepes, L
Zanathy, L
Nagy, A
机构：
[1] EOTVOS LORAND UNIV, DEPT GEN & INORGAN CHEM, H-1518 BUDAPEST 112, HUNGARY
[2] UNIV TUBINGEN, DEPT ORGAN CHEM, D-7400 TUBINGEN, GERMANY
来源：
JOURNAL OF ORGANOMETALLIC CHEMISTRY | 1996年 / 514卷 / 1-2期
关键词：
silicon carbide; chemical vapour deposition; silane; MOCVD;
D O I：
10.1016/0022-328X(95)06032-R
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Thin films of silicon carbide have been prepared by plasma enhanced chemical vapour deposition using Si(Si(CH3)(3))(4) as a precursor. This compound is stable against moisture and air and has a high vapour pressure. Furthermore, the compositions of the films prepared from this precursor show very little dependence on the plasma parameters. Consequently, this precursor is especially suited for practical applications of hard coatings.
引用
收藏
页码：23 / 28
页数：6
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