Deposition of silicon carbide films by plasma enhanced chemical vapour deposition

被引：4
|
作者：
Ramirez, J
Suhr, H
Szepes, L
Zanathy, L
Nagy, A
机构：
[1] EOTVOS LORAND UNIV, DEPT GEN & INORGAN CHEM, H-1518 BUDAPEST 112, HUNGARY
[2] UNIV TUBINGEN, DEPT ORGAN CHEM, D-7400 TUBINGEN, GERMANY
来源：
JOURNAL OF ORGANOMETALLIC CHEMISTRY | 1996年 / 514卷 / 1-2期
关键词：
silicon carbide; chemical vapour deposition; silane; MOCVD;
D O I：
10.1016/0022-328X(95)06032-R
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
Thin films of silicon carbide have been prepared by plasma enhanced chemical vapour deposition using Si(Si(CH3)(3))(4) as a precursor. This compound is stable against moisture and air and has a high vapour pressure. Furthermore, the compositions of the films prepared from this precursor show very little dependence on the plasma parameters. Consequently, this precursor is especially suited for practical applications of hard coatings.
引用
收藏
页码：23 / 28
页数：6
相关论文
共 50 条
  • [1] Characterization of hydrogenated Silicon carbide produced by plasma enhanced chemical vapour deposition at low temperature
    Pareschi, G.
    Taglioni, G.
    Basso, S.
    Citterio, O.
    De Caprio, V.
    Ghigo, M.
    Novella, L.
    Novi, A.
    Spiga, D.
    Stringhetti, L.
    OPTICAL MATERIALS AND STRUCTURES TECHNOLOGIES III, 2007, 6666
  • [2] Chemical vapour deposition of zirconium carbide and silicon carbide hybrid whiskers
    Liu, Qiaomu
    Zhang, Litong
    Cheng, Laifei
    Wang, Yiguang
    MATERIALS LETTERS, 2010, 64 (04) : 552 - 554
  • [3] Coating of activated carbon with silicon carbide by chemical vapour deposition
    Moene, R
    Boon, HT
    Schoonman, J
    Makkee, M
    Moulijn, JA
    CARBON, 1996, 34 (05) : 567 - 579
  • [4] Inductively-coupled plasma-enhanced chemical vapour deposition of hydrogenated amorphous silicon carbide thin films for MEMS
    Frischmuth, Tobias
    Schneider, Michael
    Maurer, Daniel
    Grille, Thomas
    Schmid, Ulrich
    SENSORS AND ACTUATORS A-PHYSICAL, 2016, 247 : 647 - 655
  • [5] Fabrication of nanocrystalline silicon carbide thin film by helicon wave plasma enhanced chemical vapour deposition
    Yu, Wei
    Lu, Wanbing
    Yang, Yanbin
    Wang, Chunsheng
    Zhang, Li
    Fu, Guangsheng
    THIN SOLID FILMS, 2007, 515 (05) : 2949 - 2953
  • [6] Crystallization of silicon nitride thin films synthesized by plasma-enhanced chemical vapour deposition
    Jehanathan, Neerushana
    Saunders, Martin
    Liu, Yinong
    Dell, John
    SCRIPTA MATERIALIA, 2007, 57 (08) : 739 - 742
  • [7] Silicon nitride films prepared by helicon wave plasma-enhanced chemical vapour deposition
    Yu, W
    Liu, LH
    Hou, HH
    Ding, XC
    Han, L
    Fu, GS
    ACTA PHYSICA SINICA, 2003, 52 (03) : 687 - 691
  • [8] Fabrication of low-stress plasma enhanced chemical vapor deposition silicon carbide films
    Lin, TY
    Duh, JG
    Chung, CK
    Niu, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (12A): : 6663 - 6671
  • [9] Luminescent Nanocrystalline Silicon Carbide Thin Film Deposited by Helicon Wave Plasma Enhanced Chemical Vapour Deposition
    LU Wan-bing*
    Chinese Journal of Aeronautics , 2006, (S1) : 96 - 101
  • [10] Microstructure of hydrogenated silicon carbide thin films prepared by chemical vapour deposition techniques
    Koehler, F.
    Chen, T.
    Nuys, M.
    Heidt, A.
    Luysberg, M.
    Finger, F.
    Carius, R.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 358 (17) : 2011 - 2014
12345