Electron tunneling into thin films of antimony

被引：4
|
作者：
Hatta, E
Mukasa, K
机构：
[1] Department of Electronics, Faculty of Engineering, Hokkaido University
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 98卷 / 04期
关键词：
thin films; electron-phonon interactions; tunneling;
D O I：
10.1016/0038-1098(96)00038-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Electron tunneling measurements have been performed to investigate the anisotropic effect in both the band structure and the phonons of semimetal antimony films. Depending upon the texturization of antimony films, the definite change in shape of the tunnel conductance is observed and the intravalley acoustic phonon peak becomes apparent as well as the intervalley acoustic and optical phonon peaks in the second derivatives. Furthermore, the overtone phonon peak exhibits an asymmetric structure contrary to that of the Raman spectrum. This asymmetry is not observed in point contact spectra.
引用
收藏
页码：293 / 296
页数：4
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