Dislocation analysis of 4H-and 6H-SiC single crystals using micro-Raman spectroscopy

被引：4
|
作者：
Shin, Y. J.
Kim, W. J.
Kim, H. -Y.
Bahng, W.
机构：
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
TSD; micro-Raman spectroscopy; on-axis; 4H-SiC; 6H-SiC; DEFECTS;
D O I：
10.4028/www.scientific.net/MSF.740-742.481
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Micro-Raman spectroscopy is an excellent non-destructive analysis method, which compensates for disadvantages of KOH method. Raman shifts of A(1)(LO) and E-1(TO) band paeks at threading screw dislocation(TSD) were investigated in n-type on/off-axis 4H- and 6H-SiC single crystal wafers by micro-Raman scattering at room temperature. The results showed that A(1)(LO) band were shifted toward higher frequency while the E-1(TO) band were shifted toward lower frequency on the on-axis wafers. The shifts are caused by increasing electron concentration and lattice disorder near the dislocation core, respectively. In the off-axis wafer, no shift was observed possibly due to the measurement geometry which does not contain whole dislocation core.
引用
收藏
页码：481 / 484
页数：4
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