La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

被引：21
|
作者：
Zadeh, D. H. [1 ]
Oomine, H. [1 ]
Suzuki, Y. [1 ]
Kakushima, K. [2 ]
Ahmet, P. [1 ]
Nohira, H. [1 ]
Kataoka, Y. [3 ]
Nishiyama, A. [2 ]
Sugii, N. [2 ]
Tsutsui, K. [2 ]
Natori, K. [1 ]
Hattori, T. [1 ]
Iwai, H. [1 ]
机构：
[1] Tokyo Inst Technol, Frontier Res Ctr, Yokohama, Kanagawa 2268502, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Yokohama, Kanagawa 2268502, Japan
[3] Tokyo City Univ, Dept Elect & Elect Engn, Tokyo, Japan
来源：
SOLID-STATE ELECTRONICS | 2013年 / 82卷
基金：
日本学术振兴会;
关键词：
La2O3; High-k/InGaAs; Capacitor; Metal gate; Interface reaction; Interface state density; LAYER;
D O I：
10.1016/j.sse.2013.01.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effect of W and TiN/W gate metal on the interface quality of La2O3/InGaAs metal-oxide-semiconductor (MOS) interface is investigated. Hard X-ray photoelectron spectroscopy revealed that gate metal greatly affects the oxidation states at La2O3/InGaAs interface after post-metallization annealing (PMA). Results demonstrate that TiN/W gate metal can effectively control the reaction at La2O3/InGaAs interface and also suppress the formation of As, Ga, and In oxides. As a result, superior capacitance-voltage (C-V) characteristics with low interface state density (D-it) of 4.6 x 10(11) cm(-2)/eV (similar to 0.1 eV from midgap) and leakage current below 10(-5) A/cm(2) was obtained for TiN/W/La2O3 (10 nm)/InGaAs MOS capacitors. The MOS structure integrity was preserved for annealing temperature up to 620 degrees C. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：29 / 33
页数：5
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