Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

被引：17

作者：

Gas, Katarzyna ^{[1
]}

Sadowski, Janusz ^{[1
,2
]}

Kasama, Takeshi ^{[3
]}

Siusys, Aloyzas ^{[1
]}

Zaleszczyk, Wojciech ^{[1
]}

Wojciechowski, Tomasz ^{[1
]}

Morhange, Jean-Francois ^{[4
]}

Altintas, Abdulmenaf ^{[5
,6
]}

Xu, H. Q. ^{[5
,6
,7
,8
]}

Szuszkiewicz, Wojciech ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Lund Univ, MAX Lab 4, Box 118, SE-22100 Lund, Sweden

[3] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark

[4] UPMC, Inst Nanosci Paris, UMR 7588, F-75252 Paris 05, France

[5] Lund Univ, Div Solid State Phys, SE-22100 Lund, Sweden

[6] Lund Univ, Nanometer Struct Consortium, SE-22100 Lund, Sweden

[7] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[8] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

来源：

NANOSCALE | 2013年 / 5卷 / 16期

基金：

瑞典研究理事会;

关键词：

MN-DOPED GAAS; (GA; MN)AS NANOWIRES; ION-IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTORS; FERROMAGNETISM; LUMINESCENCE; TEMPERATURE; EMISSION; MBE;

D O I：

10.1039/c3nr01145c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn2+ acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.

引用

页码：7410 / 7418

页数：9

共 67 条

[1] Postgrowth annealing of (Ga,Mn) As under As capping:: An alternative way to increase TC -: art. no. 112501 [J].