Design of a CMOS T/R Switch With High Power Capability: Using Asymmetric Transistors

被引：9

作者：

Liu, Szu-Ling ^{[1
,2
,3
]}

Wu, Meng-Hsiu ^{[1
,2
]}

Chin, Albert ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[3] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 12期

关键词：

BVdss; insertion loss; isolation; power-handling capability;

D O I：

10.1109/LMWC.2012.2227465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 mu m CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm and 2.3 dBm improvements in measured 1 dB compression points (P(1 dB)s) than the conventional circuit of the same circuitry and layout, respectively. This switch also has good insertion losses of 0.62/0.7 and 0.94/1.2 dB for transmit-end/receive-end modes at 2.4 and 5.8 GHz, respectively.

引用

页码：645 / 647

页数：3

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