Bias-stress induced instability of organic thin film transistors

被引：139

作者：

Matters, M ^{[1
]}

de Leeuw, DM ^{[1
]}

Herwig, PT ^{[1
]}

Brown, AR ^{[1
]}

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

来源：

SYNTHETIC METALS | 1999年 / 102卷 / 1-3期

关键词：

conjugated polymers; semiconductor insulator interfaces;

D O I：

10.1016/S0379-6779(98)01162-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the stability of polythienylene vinylene field-effect transistors under gate bias stress. On time scales up to 1000 s and temperatures up to 140 degrees C, we only observe reversible charge relaxation effects and no degradation. We show the time dependence of the threshold voltage shift at different temperatures. Furthermore, we discuss the influence of water and oxygen on the relaxation process.

引用

收藏

页码：998 / 999

页数：2

相关论文

共 13 条

[1] Field-effect transistors made from solution-processed organic semiconductors [J].

Brown, AR ;

Jarrett, CP ;

deLeeuw, DM ;

Matters, M .

SYNTHETIC METALS, 1997, 88 (01) :37-55

[2] DISPERSIVE CHARGE INJECTION MODEL FOR HYDROGENATED AMORPHOUS-SILICON AMORPHOUS-SILICON DIOXIDE THIN-FILM TRANSISTOR INSTABILITY [J].

FORTUNATO, G ;

MARIUCCI, L ;

REITA, C .

APPLIED PHYSICS LETTERS, 1991, 59 (07) :826-828

[3]

Horowitz G, 1998, ADV MATER, V10, P365, DOI 10.1002/(SICI)1521-4095(199803)10:5<365::AID-ADMA365>3.0.CO

[4]

2-U

[5] ROLE OF HYDROGEN IN THE FORMATION OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB ;

MARSHALL, JM ;

MOYER, MD .

PHYSICAL REVIEW B, 1989, 39 (02) :1164-1179

[6] BIAS-STRESS-INDUCED STRETCHED-EXPONENTIAL TIME-DEPENDENCE OF CHARGE INJECTION AND TRAPPING IN AMORPHOUS THIN-FILM TRANSISTORS [J].

LIBSCH, FR ;

KANICKI, J .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1286-1288

[7]

MATTERS M, 1998, IN PRESS P E MRS

[8] Temperature-independent transport in high-mobility pentacene transistors [J].

Nelson, SF ;

Lin, YY ;

Gundlach, DJ ;

Jackson, TN .

APPLIED PHYSICS LETTERS, 1998, 72 (15) :1854-1856

[9] CHARGE TRAPPING INSTABILITIES IN AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS [J].

POWELL, MJ .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :597-599

[10] Integrated optoelectronic devices based on conjugated polymers [J].

Sirringhaus, H ;

Tessler, N ;

Friend, RH .

SCIENCE, 1998, 280 (5370) :1741-1744