Study of Si-based Ge heteroepitaxy using RPCVD

被引：0
|
作者：
Yao, Lei [1 ]
Liang, Renrong [1 ]
Jiang, Chunsheng [1 ]
Wang, Jing [1 ]
Xu, Jun [1 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China
来源：
2014 7TH INTERNATIONAL SILICON-GERMANIUM TECHNOLOGY AND DEVICE MEETING (ISTDM) | 2014年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：93 / +
页数：2
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