Electron transfer in hydrogenated nanocrystalline silicon observed by time-resolved terahertz spectroscopy

被引：19

作者：

Bergren, Matthew R. ^{[1
,4
]}

Simonds, Brian J. ^{[1
]}

Yan, Baojie ^{[2
]}

Yue, Guozhen ^{[2
]}

Ahrenkiel, Richard ^{[3
,4
]}

Furtak, Thomas E. ^{[1
]}

Collins, Reuben T. ^{[1
]}

Taylor, P. Craig ^{[1
]}

Beard, Matthew C. ^{[4
]}

机构：

[1] Colorado Sch Mines, Dept Phys, Golden, CO 80401 USA

[2] United Solar Ovon, Auburn Hills, MI 48326 USA

[3] Colorado Sch Mines, Met & Mat Engn Dept, Golden, CO 80401 USA

[4] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 08期

关键词：

DEFECT; SI;

D O I：

10.1103/PhysRevB.87.081301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the ultrafast carrier dynamics in hydrogenated nanocrystalline silicon (nc-Si: H) using time-resolved terahertz spectroscopy. Photoexcitation at 407 nm primarily produces charge carriers in the a-Si phase, but they undergo a rapid electron transfer to the c-Si phase prior to complete thermalization into the band-tail states of a-Si. We studied the carrier dynamics on a range of nc-Si: H samples with varying crystalline volume fractions (X-c) and mapped out the carrier dynamics with sub-ps resolution. Our measurements are consistent with a model in which electrons are first trapped at interface states at the a-Si-c-Si boundary prior to being thermally emitted into the c-Si phase. Wavelength and temperature dependent measurements are consistent with our model. The phenomena observed here have implications toward solar cell structures that utilize an amorphous material as an absorber layer, previously thought to have a mobility value too low to attain effective charge transport in a device. DOI: 10.1103/PhysRevB.87.081301

引用

页数：5

共 25 条

[1]

Aspnes D.E., 1999, PROPERTIES CRYSTALLI

[2] Terahertz spectroscopy [J].

Beard, MC ;

Turner, GM ;

Schmuttenmaer, CA .

JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (29) :7146-7159

[3] EXPERIMENTAL-DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION IN SILICON THIN-FILMS FROM RAMAN-SPECTROSCOPY [J].

BUSTARRET, E ;

HACHICHA, MA ;

BRUNEL, M .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1675-1677

[4]

Cody GD., 1984, SEMICONDUCTORS SEMIM, V21

[5] THE PROPERTIES OF FREE-CARRIERS IN AMORPHOUS-SILICON [J].

FAUCHET, PM ;

HULIN, D ;

VANDERHAGHEN, R ;

MOURCHID, A ;

NIGHAN, WL .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 141 (1-3) :76-87

[6] Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy [J].

Fekete, L. ;

Kuzel, P. ;

Nemec, H. ;

Kadlec, F. ;

Dejneka, A. ;

Stuchlik, J. ;

Fejfar, A. .

PHYSICAL REVIEW B, 2009, 79 (11)

[7] Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity [J].

Guha, S ;

Yang, J ;

Williamson, DL ;

Lubianiker, Y ;

Cohen, JD ;

Mahan, AH .

APPLIED PHYSICS LETTERS, 1999, 74 (13) :1860-1862

[8]

Hazra S, 1999, SOLID STATE COMMUN, V109, P125, DOI 10.1016/S0038-1098(98)00522-5

[9]

Jones S.H., 1999, Properties of Crystalline Silicon

[10] Effects of embedded crystallites in amorphous silicon on light-induced defect creation [J].

Kamei, T ;

Stradins, P ;

Matsuda, A .

APPLIED PHYSICS LETTERS, 1999, 74 (12) :1707-1709

← 1 2 3 →