Anti-Stokes luminescence in heavily doped semiconductors as a mechanism of laser cooling

被引:5
|
作者
Eliseev, P. G. [1 ]
机构
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
基金
美国国家航空航天局;
关键词
optical refrigeration; laser cooling; semiconductors; anti-Stokes luminescence;
D O I
10.2478/s11772-008-0024-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The anti-Stokes luminescence is a mechanism of the optical refrigeration in semiconductor light sources. The heavily doped semiconductors are considered as a material for the laser cooling. The limitation of this mechanism appears to be connected with a transition from the non-degenerate to degenerate occupation. This transition occurs at higher pumping rate (along with the transition to the optical gain and lasing) and at lower temperature. Thus, the limit for the laser cooling can be indicated. The minimal obtainable temperature is about 60-120 K depending on the doping level. The laser cooling of a semiconductor is impeded by the difficulty of extracting the spontaneous emission from a radiating body that is characterized by large angle of the total internal reflection.
引用
收藏
页码:199 / 207
页数:9
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