Metal-semiconductor-metal photodiodes fabricated from thin-film diamond

被引:24
|
作者
Looi, HJ [1 ]
Whitfield, MD [1 ]
Jackman, RB [1 ]
机构
[1] UCL, London WC1E 7JE, England
关键词
D O I
10.1063/1.123335
中图分类号
O59 [应用物理学];
学科分类号
摘要
A metal-semiconductor-metal Schottky barrier photodetector has been fabricated on a "hydrogen-doped'' surface-conducting chemical vapor deposition (CVD) diamond. The device is fabricated in one step by forming two back-to-back aluminum Schottky diodes on the p-type surface. This simple process is compatible with previously reported metal-semiconductor field-effect transistor fabrication on this type of CVD diamond and offers the prospect of the monolithic integration of a ultraviolet detector and active circuitry. Preliminary electrical and optical characteristics of the device have been measured, including the spectral response over the range 180-800 nm. The device exhibits a linear response with the applied optical power at 220 nm, operates at a bias of only 2 V, and shows visible blind characteristics, with a spectral discrimination of three orders of magnitude as determined from the ratio of 200-550 nm responses. (C) 1999 American Institute of Physics. [S0003-6951(99)01922-1].
引用
收藏
页码:3332 / 3334
页数:3
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