Properties of a p-n Junction Formed in a Porous Silicon Film Grown by Metal-Assisted Chemical Etching

被引：1
|
作者：
Melnik, N. N. [1 ]
Tregulov, V. V. [2 ]
Skoptsova, G. N. [2 ]
Ivanov, A. I. [2 ]
Kostsov, D. S. [1 ]
机构：
[1] Russian Acad Sci, Lebedev Phys Inst, Moscow 119991, Russia
[2] Yesenin Ryazan State Univ, Ryazan 390000, Russia
来源：
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2022年 / 49卷 / 09期
关键词：
porous silicon; metal-assisted chemical etching; p-n junction; diffusion; Raman scattering; photovoltaic characteristics; current-voltage characteristics; charge carrier transport;
D O I：
10.3103/S1068335622090044
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The results of the study of the semiconductor structure with a p-n junction formed by thermal diffusion of phosphorus into a p-type porous silicon film are presented. The porous film was grown by metal-assisted chemical etching. It is shown that diffusion is accompanied by a decrease in silicon crystallite sizes in the porous layer. In the base region of the p-n junction, a quantum-size effect appears, leading to band gap widening. The observed charge carrier transfer mechanisms are characteristic of p-n junctions containing traps.
引用
收藏
页码：271 / 275
页数：5
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