Temperature dependence of steady and time-resolved photoluminescence in Si quantum dots/SiO2 superlattices

被引：5

作者：

Yu, Wei ^{[1
]}

Feng, Huina ^{[1
]}

Wang, Jin ^{[1
]}

Dai, Wanlei ^{[1
]}

Yu, Xiang ^{[1
]}

Zhang, Jiawei ^{[1
]}

Lai, Weidong ^{[1
]}

Fu, Guangsheng ^{[1
]}

机构：

[1] Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat Mat, Baoding 071002, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 2014年 / 434卷

关键词：

Superlattices; Time-resolved photoluminescence; Singlet-triplet state; SILICON NANOCRYSTALS; LUMINESCENCE; EFFICIENCY; EMISSION;

D O I：

10.1016/j.physb.2013.11.016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Superlattices of amorphous silicon rich oxide (a-SiOx) and silicon dioxide (SiO2) have been deposited by plasma enhanced chemical vapor deposition technique, and Si quantum dots (Si-QDs) are obtained in the a-SiOx layers by the following annealing treatment. Steady and time-resolved photoluminescence (PL) spectra at different temperatures are measured. Two broad PL bands located in the regions of 1.2-1.6 eV and 2.1-3.1 eV are obtained at low temperature, and they are defined as S band and F band, respectively. The PL decay time of the samples increases rapidly with decreasing temperature. Analyses show that the recombination dynamics of S band is related to the dispersive motion of excitons, and its PL lifetime is associated with an upper level singlet state and a lower level triplet state, while that of the F band is related to the recombination of oxygen related defects. (C) 2013 Elsevier B.V. All rights reserved

引用

页码：177 / 180

页数：4

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