Surface States of (100) O-Terminated Diamond: Towards Other 1 x 1:O Reconstruction Models

被引:19
作者
Alba, Gonzalo [1 ]
Pilar Villar, M. [1 ]
Alcantara, Rodrigo [2 ]
Navas, Javier [2 ]
Araujo, Daniel [1 ]
机构
[1] Univ Cadiz, Fac Ciencias, Dept Ciencia Mat & IM & QI, Cadiz 11510, Spain
[2] Univ Cadiz, Fac Ciencias, Dept Quim Fis, Cadiz 11510, Spain
基金
欧盟地平线“2020”;
关键词
O-terminated diamond; H-terminated diamond; diamond surface reconstruction; angle-resolved XPS; NEGATIVE ELECTRON-AFFINITY; RAY PHOTOELECTRON; FIELD-EMISSION; OXIDATION; GRAPHITE; FILMS; XPS; GRAPHITIZATION; KINETICS; SPECTRA;
D O I
10.3390/nano10061193
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Diamond surface properties show a strong dependence on its chemical termination. Hydrogen-terminated and oxygen-terminated diamonds are the most studied terminations with many applications in the electronic and bioelectronic device field. One of the main techniques for the characterization of diamond surface terminations is X-ray photoelectron spectroscopy (XPS). In this sense, the use of angle-resolved XPS (ARXPS) experiments allows obtaining depth-dependent information used here to evidence (100)-O-terminated diamond surface atomic configuration when fabricated by acid treatment. The results were used to compare the chemistry changes occurring during the oxidation process using a sublayer XPS intensity model. The formation of non-diamond carbon phases at the subsurface and higher oxygen contents were shown to result from the oxygenation treatment. A new (100) 1 x 1:O surface reconstruction model is proposed to explain the XPS quantification results of O-terminated diamond.
引用
收藏
页码:1 / 15
页数:15
相关论文
共 54 条
[21]   Field emission studies of CVD diamond thin films: effect of acid treatment [J].
Koinkar, PM ;
Patil, PP ;
More, MA ;
Tondare, VN ;
Joag, DS .
VACUUM, 2003, 72 (03) :321-326
[22]   Direct determination of the barrier height of Ti-based ohmic contact on p-type diamond (001) [J].
Kono, S. ;
Teraji, T. ;
Kodama, H. ;
Ichikawa, K. ;
Ohnishi, S. ;
Sawabe, A. .
DIAMOND AND RELATED MATERIALS, 2015, 60 :117-122
[23]   Band diagram for chemical vapor deposition diamond surface conductive layer: Presence of downward band bending due to shallow acceptors [J].
Kono, S. ;
Saito, T. ;
Kang, S. H. ;
Jung, W. Y. ;
Kim, B. Y. ;
Kawata, H. ;
Goto, T. ;
Kakefuda, Y. ;
Yeom, H. W. .
SURFACE SCIENCE, 2010, 604 (13-14) :1148-1165
[24]   Characteristic energy band values and electron attenuation length of a chemical-vapor-deposition diamond (001)2 x 1 surface [J].
Kono, S. ;
Saitou, T. ;
Kawata, H. ;
Goto, T. ;
Kakefuda, Y. ;
Komeda, T. .
SURFACE SCIENCE, 2009, 603 (06) :860-866
[25]   Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001) [J].
Kono, Shozo ;
Kageura, Taisuke ;
Hayashi, Yuya ;
Ri, Sung-Gi ;
Teraji, Tokuyuki ;
Takeuchi, Daisuke ;
Ogura, Masahiko ;
Kodama, Hideyuki ;
Sawabe, Atsuhito ;
Inaba, Masafumi ;
Hiraiwa, Atsushi ;
Kawarada, Hiroshi .
DIAMOND AND RELATED MATERIALS, 2019, 93 :105-130
[26]   Negative electron affinity mechanism for diamond surfaces [J].
Krainsky, IL ;
Asnin, VM .
APPLIED PHYSICS LETTERS, 1998, 72 (20) :2574-2576
[27]   Enhancement and Stabilization of Hole Concentration of Hydrogen-Terminated Diamond Surface Using Ozone Adsorbates [J].
Kubovic, Michal ;
Kasu, Makoto .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (11)
[28]   Relative electron inelastic mean free paths for diamond and graphite at 8 keV and intrinsic contributions to the energy-loss [J].
Kunz, C. ;
Cowie, B. C. C. ;
Drube, W. ;
Lee, T. -L. ;
Thiess, S. ;
Wild, C. ;
Zegenhagen, J. .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2009, 173 (01) :29-39
[29]   Barrier Heights of Au on Diamond with Different Terminations Determined by X-ray Photoelectron Spectroscopy [J].
Li, Fengnan ;
Zhang, Jingwen ;
Wang, Xiaoliang ;
Zhang, Minghui ;
Wang, Hongxing .
COATINGS, 2017, 7 (07)
[30]   Surface oxygenation studies on (100)-oriented diamond using an atom beam source and local anodic oxidation [J].
Loh, KP ;
Xie, XN ;
Lim, YH ;
Teo, EJ ;
Zheng, JC ;
Ando, T .
SURFACE SCIENCE, 2002, 505 (1-3) :93-114