Synthesis of SiGe layered structure in single crystalline Ge substrate by low energy Si ion implantation

被引：4

作者：

Mollick, S. A. ^{[1
]}

Ghose, D. ^{[1
]}

Bhattacharyya, S. R. ^{[1
]}

Bhunia, S. ^{[1
]}

Ray, N. R. ^{[1
]}

Ranjan, M. ^{[2
]}

机构：

[1] Saha Inst Nucl Phys, Kolkata 700064, India

[2] Inst Plasma Res, FCIPT, Gandhinagar 382016, India

来源：

VACUUM | 2014年 / 101卷

关键词：

SiGe; Ion implantation; TEM; Raman spectroscopy; SILICON; NANOSTRUCTURES; TEMPERATURE; RELAXATION; DIFFUSION; PRESSURE; ALLOYS; GROWTH; STRAIN;

D O I：

10.1016/j.vacuum.2013.10.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanometer-thickness SiGe alloy layers were synthesized by direct Si ion implantation in Ge (100) wafers at different fluences followed by high temperature annealing. The cross-sectional transmission electron microscopy and secondary ion mass spectrometry reveal the formation of a thin Si-rich crystalline layer in the near-surface region. The micro-Raman spectroscopy and X-ray reflectivity techniques were used to determine the composition and strain in SiGe alloy layers. The photoluminescence measurements of the annealed samples showed a broad emission, peaking around 500 nm. The peak intensity is, however, dependent on the bombarding fluence. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：387 / 393

页数：7

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