Synthesis of SiGe layered structure in single crystalline Ge substrate by low energy Si ion implantation

被引：4
|
作者：
Mollick, S. A. [1 ]
Ghose, D. [1 ]
Bhattacharyya, S. R. [1 ]
Bhunia, S. [1 ]
Ray, N. R. [1 ]
Ranjan, M. [2 ]
机构：
[1] Saha Inst Nucl Phys, Kolkata 700064, India
[2] Inst Plasma Res, FCIPT, Gandhinagar 382016, India
来源：
VACUUM | 2014年 / 101卷
关键词：
SiGe; Ion implantation; TEM; Raman spectroscopy; SILICON; NANOSTRUCTURES; TEMPERATURE; RELAXATION; DIFFUSION; PRESSURE; ALLOYS; GROWTH; STRAIN;
D O I：
10.1016/j.vacuum.2013.10.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanometer-thickness SiGe alloy layers were synthesized by direct Si ion implantation in Ge (100) wafers at different fluences followed by high temperature annealing. The cross-sectional transmission electron microscopy and secondary ion mass spectrometry reveal the formation of a thin Si-rich crystalline layer in the near-surface region. The micro-Raman spectroscopy and X-ray reflectivity techniques were used to determine the composition and strain in SiGe alloy layers. The photoluminescence measurements of the annealed samples showed a broad emission, peaking around 500 nm. The peak intensity is, however, dependent on the bombarding fluence. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：387 / 393
页数：7
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