Carrier Recombination, Long-Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

被引：17

作者：

Rumyantsev, Vladimir ^{[1
,2
]}

Fadeev, Mikhail ^{[1
]}

Aleshkin, Vladimir ^{[1
,2
]}

Kulikov, Nikita ^{[1
,2
]}

Utochkin, Vladimir ^{[1
,2
]}

Mikhailov, Nikolai ^{[3
,4
]}

Dvoretskii, Sergey ^{[3
,5
]}

Pavlov, Sergey ^{[6
]}

Huebers, Heinz-Wilhelm ^{[6
,7
]}

Gavrilenko, Vladimir ^{[1
,2
]}

Sirtori, Carlo ^{[8
]}

Krasilnik, Zakhary F. ^{[1
]}

Morozov, Sergey ^{[1
,2
]}

机构：

[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Lobachevsky State Univ, Nizhnii Novgorod 603950, Russia

[3] Russian Acad Sci, AV Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

[4] Novosibirsk State Univ, Novosibirsk 630090, Russia

[5] Tomsk State Univ, Novosibirsk 634050, Russia

[6] German Aerosp Ctr DLR, Inst Opt Sensor Syst, Rutherfordstr 2, D-12489 Berlin, Germany

[7] Humboldt Univ, Inst Phys, Newtonstr 15, D-12489 Berlin, Germany

[8] Univ Paris Diderot, Lab Mat & Phenomenes Quant, F-75205 Paris, France

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2019年 / 256卷 / 06期

基金：

俄罗斯科学基金会; 俄罗斯基础研究基金会;

关键词：

carrier recombination; HgCdTe; radiative recombination; stimulated emission; CASCADE LASERS; HGTE/CDTE SUPERLATTICES; DIODE-LASERS; LIFETIME; AUGER;

D O I：

10.1002/pssb.201800546

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Interband photoluminescence (PL) and stimulation emission (SE) from HgTe/HgCdTe quantum well (QW) heterostructures are studied in 5-20 mu m wavelength range in regard to long-wavelength lasing applications. The authors obtain carrier lifetimes using time-resolved photoconductivity measurements and show that the dominating mechanism of carrier recombination changes from the radiative process to the non-radiative one as the bandgap is decreased, limiting the "operating" temperature for SE. The authors suggest that decreasing the QW width should reverse the balance in carrier recombination in favor of radiative processes and demonstrate 75?K improvement in the operating temperature in structure with narrower QW.

引用

页数：6

共 38 条

[1] Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications [J].

Aleshkin, V. Ya ;

Dubinov, A. A. ;

Rumyantsev, V. V. ;

Fadeev, M. A. ;

Domnina, O. L. ;

Mikhailov, N. N. ;

Dvoretsky, S. A. ;

Teppe, F. ;

Gavrilenko, V., I ;

Morozov, S., V .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 30 (49)

[2] Auger recombination in Dirac materials: A tangle of many-body effects [J].

Alymov, Georgy ;

Vyurkov, Vladimir ;

Ryzhii, Victor ;

Satou, Akira ;

Svintsov, Dmitry .

PHYSICAL REVIEW B, 2018, 97 (20)

[3] GaN-based terahertz quantum cascade lasers [J].

Terashima, Wataru ;

Hirayama, Hideki .

TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS IX: ADVANCED APPLICATIONS IN INDUSTRY AND DEFENSE, 2015, 9483

[4] HGCDTE INFRARED DIODE-LASERS GROWN BY MBE [J].

ARIAS, JM ;

ZANDIAN, M ;

ZUCCA, R ;

SINGH, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :S255-S260

[5] High temperature operation of far infrared (λ ≈20 μm) InAs/AlSb quantum cascade lasers with dielectric waveguide [J].

Bahriz, M. ;

Lollia, G. ;

Baranov, A. N. ;

Teissier, R. .

OPTICS EXPRESS, 2015, 23 (02) :1523-1528

[6] Quantum spin Hall effect and topological phase transition in HgTe quantum wells [J].

Bernevig, B. Andrei ;

Hughes, Taylor L. ;

Zhang, Shou-Cheng .

SCIENCE, 2006, 314 (5806) :1757-1761

[7] Ultrafast carrier dynamics and terahertz emission in optically pumped graphene at room temperature [J].

Boubanga-Tombet, S. ;

Chan, S. ;

Watanabe, T. ;

Satou, A. ;

Ryzhii, V. ;

Otsuji, T. .

PHYSICAL REVIEW B, 2012, 85 (03)

[8] DIODE LASERS OF PB1-YSNYSE AND PB1-XSNXTE [J].

BUTLER, JF ;

CALAWA, AR ;

HARMAN, TC .

APPLIED PHYSICS LETTERS, 1966, 9 (12) :427-&

[9]

Chu J, 2008, MICRODEVICE PHYS FAB, P1

[10] BAND STRUCTURE AND LASER ACTION IN PBXSN1-XTE [J].

DIMMOCK, JO ;

MELNGAIL.I ;

STRAUSS, AJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (26) :1193-&

← 1 2 3 4 →