Epitaxially grown molybdenum thin films deposited by laser ablation on (100)MgO substrates

被引：4

作者：

GuillouxViry, M ^{[1
]}

Perrin, A ^{[1
]}

Padiou, J ^{[1
]}

Sergent, M ^{[1
]}

Rossel, C ^{[1
]}

机构：

[1] IBM CORP,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

THIN SOLID FILMS | 1996年 / 280卷 / 1-2期

关键词：

epitaxy; laser ablation; molybdenum;

D O I：

10.1016/0040-6090(95)08213-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report here on the deposition process by laser ablation and on the characterization of molybdenum films epitaxially grown on (100)MgO single-crystal substrates. The 50 nm (100)Mo films are epitaxied. These films have a low resistivity (similar to 5.3 mu Ohm cm at 273 K) close to the pure molybdenum resistivity value (4.85 mu Ohm cm at 273 K). The low resistivity corroborates the quality of the Mo films in spite of a very low deposition rate (similar to 25 nm h(-1)). An other orientation has been also encountered. The complementary characterization methods (X-ray diffraction in theta-2 theta or oscillating crystal mode, reflection high-energy electron diffraction and electron channelling patterns) have shown it to be the (110)Mo orientation.

引用

页码：76 / 82

页数：7

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