Influence of C-implanted ions on the transition properties of VO2 thin films

被引：3

作者：

Mabakachaba, B. M. ^{[1
,3
]}

Madiba, I. G. ^{[2
,3
]}

Khanyile, B. S. ^{[2
,3
]}

Arendse, C. J. ^{[1
]}

Kennedy, J. ^{[4
]}

Maaza, M. ^{[2
,3
]}

机构：

[1] Univ Western Cape, Dept Phys, Robert Sobukwe Rd, ZA-7535 Cape Town, South Africa

[2] Univ South Africa UNISA, Coll Grad Studies, UNESCO UNISA Africa Chair Nanosci Nanotechnol, POB 392, Pretoria, South Africa

[3] iThemba Labs Natl Res Fdn, 1 Old Faure Rd,Somerset West 7129,POB 722, Somerset West, Western Cape Pr, South Africa

[4] Natl Isotope Ctr, GNS Sci, Adv Mat & Nanotechnol, 30 Gracefield Rd,POB 30368, Lower Hutt 5010, New Zealand

来源：

MRS ADVANCES | 2020年 / 5卷 / 40-41期

基金：

新加坡国家研究基金会;

关键词：

amorphous; dopant; ion-implantation; phase transformation; thin film;

D O I：

10.1557/adv.2020.137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The study report on Vanadium dioxide thin films of about 100nm thickness deposited using pulsed laser deposition on Si (100). The novel phase change reported is attributed to the post-treatment of the films via ion implantation with 25 KeV C+ ion beam at varying particle fluence (1E15, 1E16, and 1E17 /cm(2)). At the initial fluence, the preferred phase is retained while amorphization and recrystallization of the film is observed as the fluence increase to 1E16 ions/cm(2) and 1E17 ions/cm(2), respectively. The phase transition of the samples is observed to occur at a temperature below 320 K while stabilization of the low phase structure is observed for the middle fluence. Further increase restores the SMT behaviour/trend that occurred at elevated temperatures.

引用

页码：2139 / 2146

页数：8

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