Influence of C-implanted ions on the transition properties of VO2 thin films

The study report on Vanadium dioxide thin films of about 100nm thickness deposited using pulsed laser deposition on Si (100). The novel phase change reported is attributed to the post-treatment of the films via ion implantation with 25 KeV C+ ion beam at varying particle fluence (1E15, 1E16, and 1E17 /cm(2)). At the initial fluence, the preferred phase is retained while amorphization and recrystallization of the film is observed as the fluence increase to 1E16 ions/cm(2) and 1E17 ions/cm(2), respectively. The phase transition of the samples is observed to occur at a temperature below 320 K while stabilization of the low phase structure is observed for the middle fluence. Further increase restores the SMT behaviour/trend that occurred at elevated temperatures.