Influence of C-implanted ions on the transition properties of VO2 thin films

被引:3
作者
Mabakachaba, B. M. [1 ,3 ]
Madiba, I. G. [2 ,3 ]
Khanyile, B. S. [2 ,3 ]
Arendse, C. J. [1 ]
Kennedy, J. [4 ]
Maaza, M. [2 ,3 ]
机构
[1] Univ Western Cape, Dept Phys, Robert Sobukwe Rd, ZA-7535 Cape Town, South Africa
[2] Univ South Africa UNISA, Coll Grad Studies, UNESCO UNISA Africa Chair Nanosci Nanotechnol, POB 392, Pretoria, South Africa
[3] iThemba Labs Natl Res Fdn, 1 Old Faure Rd,Somerset West 7129,POB 722, Somerset West, Western Cape Pr, South Africa
[4] Natl Isotope Ctr, GNS Sci, Adv Mat & Nanotechnol, 30 Gracefield Rd,POB 30368, Lower Hutt 5010, New Zealand
基金
新加坡国家研究基金会;
关键词
amorphous; dopant; ion-implantation; phase transformation; thin film;
D O I
10.1557/adv.2020.137
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The study report on Vanadium dioxide thin films of about 100nm thickness deposited using pulsed laser deposition on Si (100). The novel phase change reported is attributed to the post-treatment of the films via ion implantation with 25 KeV C+ ion beam at varying particle fluence (1E15, 1E16, and 1E17 /cm(2)). At the initial fluence, the preferred phase is retained while amorphization and recrystallization of the film is observed as the fluence increase to 1E16 ions/cm(2) and 1E17 ions/cm(2), respectively. The phase transition of the samples is observed to occur at a temperature below 320 K while stabilization of the low phase structure is observed for the middle fluence. Further increase restores the SMT behaviour/trend that occurred at elevated temperatures.
引用
收藏
页码:2139 / 2146
页数:8
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