Preparation of lanthanum doped Bi4Ti3O12 ceramics by the polymeric precursor method

被引:48
作者
Simoes, A. Z.
Quinelato, C.
Ries, A.
Stojanovic, B. D.
Longo, E.
Varela, J. A.
机构
[1] Univ Estadual Paulista, UNESP, Inst Chem, BR-14801970 Araraquara, SP, Brazil
[2] Univ Fed Sao Carlos, Dept Chem, BR-13560905 Sao Carlos, SP, Brazil
[3] Univ Belgrade, Ctr Multidisciplinary Studies, Belgrade, Serbia Monteneg
基金
巴西圣保罗研究基金会;
关键词
ceramics; crystal structure; sintering;
D O I
10.1016/j.matchemphys.2005.09.070
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT) ceramics, with x ranging from 0 to 0.75 were prepared by the polymeric precursor method. Orthorhombicity of the system is decreased with the increase of lanthanum content in the bismuth titanate (BIT) crystal lattice. No secondary phases were evident after lanthanum addition. Increasing lanthanum content causes a structural distortion in the bismuth titanate lattice. The shape of the grains is strongly influenced by the lanthanum added to the system. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码:481 / 485
页数:5
相关论文
共 21 条
[1]   ELECTRICAL AND OPTICAL PROPERTIES OF FERROELECTRIC BI4TI3O12 SINGLE CRYSTALS [J].
CUMMINS, SE ;
CROSS, LE .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2268-&
[2]   CRYSTAL-STRUCTURE OF BI4TI3O12 [J].
DORRIAN, JF ;
NEWNHAM, RE ;
KAY, MI ;
SMITH, DK .
FERROELECTRICS, 1971, 3 (01) :17-&
[3]   Dielectric and ferroelectric properties of Ta-doped bismuth titanate [J].
Hong, SH ;
Horn, JA ;
Trolier-McKinstry, S ;
Messing, GL .
JOURNAL OF MATERIALS SCIENCE LETTERS, 2000, 19 (18) :1661-1664
[4]   Templated grain growth of textured bismuth titanate [J].
Horn, JA ;
Zhang, SC ;
Selvaraj, U ;
Messing, GL ;
Trolier-McKinstry, S .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (04) :921-926
[5]   Dielectric study in nanocrystalline Bi4Ti3012 prepared by chemical coprecipitation [J].
Jiang, AQ ;
Li, GH ;
Zhang, LD .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) :4878-4883
[6]   The induced phase transformation and oxygen vacancy relaxation in La-modified bismuth titanate ceramics [J].
Jiang, AQ ;
Hu, ZX ;
Zhang, LD .
APPLIED PHYSICS LETTERS, 1999, 74 (01) :114-116
[7]   INTERNAL BIAS IN ACCEPTOR-DOPED BATIO3 CERAMICS - NUMERICAL EVALUATION OF INCREASE AND DECREASE [J].
LOHKAMPER, R ;
NEUMANN, H ;
ARLT, G .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) :4220-4224
[8]   Rietveld analysis and dielectric properties of Bi2WO6-Bi4Ti3O12 ferroelectric system [J].
Luo, S ;
Noguchi, Y ;
Miyayama, M ;
Kudo, T .
MATERIALS RESEARCH BULLETIN, 2001, 36 (3-4) :531-540
[9]   Lanthanum-substituted bismuth titanate for use in non-volatile memories [J].
Park, BH ;
Kang, BS ;
Bu, SD ;
Noh, TW ;
Lee, J ;
Jo, W .
NATURE, 1999, 401 (6754) :682-684
[10]  
Pechini M.P, 1967, US Pat. Off., Patent No. [3330697, 3,330,697]