Epsilon near-zero all-optical terahertz modulator

被引：10

作者：

Alvear-Cabezon, E. ^{[1
,2
]}

Taliercio, T. ^{[2
]}

Blin, S. ^{[2
]}

Smaali, R. ^{[1
]}

Gonzalez-Posada, F. ^{[2
]}

Baranov, A. ^{[2
]}

Teissier, R. ^{[2
]}

Centeno, E. ^{[1
]}

机构：

[1] Univ Clermont Auvergne, CNRS, Inst Pascal, SIGMA Clermont, F-63000 Clermont Ferrand, France

[2] Univ Montpellier, UMR CNRS 5214, IES, Montpellier, France

来源：

APPLIED PHYSICS LETTERS | 2020年 / 117卷 / 11期

关键词：

D O I：

10.1063/5.0012206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose an efficient optically actuated THz modulator based on an ultrathin epsilon-near-zero (ENZ) slab photogenerated in an InAs semiconductor. We experimentally demonstrate a modulation depth of 90% at 1THz obtained with a continuous laser at irradiation lower than 10 W cm - 2. Beyond the strong attenuation of the THz transmission provided by the ENZ absorption effect, we also report a broadband modulation of the THz waves from 1 to 10THz. In addition, our experimental results show that the cut-off frequency of 3dB attains 2MHz in the dynamic modulation regime.

引用

页数：5

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