Structure and luminescent properties of GaN nanorods grown by magnetron sputtering and ammoniating technique

被引：7

作者：

Chen, Jinhua ^{[1
]}

Xue, Chengshan ^{[1
]}

Zhuang, Huizhao ^{[1
]}

Li, Hong ^{[1
]}

Qin, Lixia ^{[1
]}

Yang, Zhaozhu ^{[1
]}

机构：

[1] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China

来源：

JOURNAL OF MATERIALS PROCESSING TECHNOLOGY | 2008年 / 208卷 / 1-3期

基金：

中国国家自然科学基金;

关键词：

GaN; Nanorods; Single crystal; Luminescence;

D O I：

10.1016/j.jmatprotec.2007.12.110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel rare earth metal seed Tb was employed as the catalyst to grow GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. Studies by X-ray diffraction indicate that the nanorods are hexagonal GaN. Observations by scanning electron microscopy and high-resolution transmission electron microscopy show that GaN is of single-crystal nanorod structure. Photoluminescence spectrum shows the products possess good luminescent properties. The growth mechanism of GaN nanorods is also discussed. (C) 2008 Published by Elsevier B.V.

引用

页码：255 / 258

页数：4

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