INVESTIGATION OF Cu(In, Ga)Se2 FILMS FABRICATED BY ONE-STEP ELECTRODEPOSITION

被引：0

作者：

Chen, Hsiang ^{[1
]}

Yeh, Yih Min ^{[2
]}

Huang, Sheng Ting ^{[1
]}

Yeh, Wen Jin ^{[2
]}

机构：

[1] Natl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Puli, Taiwan

[2] WuFeng Univ, Grad Sch Optomechatron & Mat, Chiayi, Taiwan

来源：

CHALCOGENIDE LETTERS | 2013年 / 10卷 / 07期

关键词：

one-step; electrodeposition; Cu(In; Ga)Se-2; thin film solar cell; annealing; SOLAR-CELLS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, CIGS thin films were fabricated on an ITO substrate by one-step electrodeposition with different conditions. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscope (AFM), and energy-dispersive X-ray spectroscopy (EDS). In addition, we annealed the as-deposited thin film at 200-350 degrees C for 30 min and then analyzed the crystalline structure and material morphology of the annealed films to observe the effects of annealing on the film composition.

引用

页码：229 / 238

页数：10

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